Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates
- Авторы: Ezhovskii Y.1, Zakharova N.1
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Учреждения:
- St. Petersburg State Technological Institute (Technical University)
- Выпуск: Том 90, № 3 (2016)
- Страницы: 647-651
- Раздел: Physical Chemistry of Surface Phenomena
- URL: https://journals.rcsi.science/0036-0244/article/view/167933
- DOI: https://doi.org/10.1134/S0036024416030092
- ID: 167933
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Аннотация
The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.
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Об авторах
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Автор, ответственный за переписку.
Email: office@technolog.edu.ru
Россия, St. Petersburg, 190013
N. Zakharova
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Россия, St. Petersburg, 190013