电邮这篇文章 The Determining Role of the (HF2)– Ion in the Formation of Pores in Silicon in Its Electrochemical Etching with Hydrofluoric Acid Solutions
- 作者: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Slipchenko E.A.1, Kornilova D.S.1, Tsygankova M.V.1, Shvets V.I.1
-
隶属关系:
- Institute of Fine Chemical Technologies
- 期: 卷 63, 编号 9 (2018)
- 页面: 1236-1242
- 栏目: Physical Chemistry of Solutions
- URL: https://journals.rcsi.science/0036-0236/article/view/168996
- DOI: https://doi.org/10.1134/S0036023618090024
- ID: 168996
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
A model of the chemical interaction of Si with the (HF2)– ion was propsoed to explain some experimental data on the formation of porous silicon.
作者简介
E. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
A. Khort
Institute of Fine Chemical Technologies
编辑信件的主要联系方式.
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
A. Yakovenko
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
E. Slipchenko
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
D. Kornilova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
M. Tsygankova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
V. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
补充文件
