The Determining Role of the (HF 2 ) –  Ion in the Formation of Pores in Silicon in Its Electrochemical Etching with Hydrofluoric Acid Solutions

The Determining Role of the (HF₂)^– Ion in the Formation of Pores in Silicon in Its Electrochemical Etching with Hydrofluoric Acid Solutions

Авторлар: Abramova E.N.¹, Khort A.M.¹, Yakovenko A.G.¹, Slipchenko E.A.¹, Kornilova D.S.¹, Tsygankova M.V.¹, Shvets V.I.¹
Мекемелер:
1. Institute of Fine Chemical Technologies
Шығарылым: Том 63, № 9 (2018)
Беттер: 1236-1242
Бөлім: Physical Chemistry of Solutions
URL: https://journals.rcsi.science/0036-0236/article/view/168996
DOI: https://doi.org/10.1134/S0036023618090024
ID: 168996

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A model of the chemical interaction of Si with the (HF₂)^– ion was propsoed to explain some experimental data on the formation of porous silicon.