Spin magnetoresistance of thin film structures of manganite and material with strong spin-orbit interaction.

G. D. Ul'ev; Ульев Г. Д.; K. I. Constantinian; Константинян К. И.; Y. E. Moskal'; Москаль И. Е.; G. A. Ovsyannikov; Овсянников Г. А.; A. V. Shadrin; Шадрин А. В.

doi:10.31857/S0033849423100194

Spin magnetoresistance of thin film structures of manganite and material with strong spin-orbit interaction.

作者: Ul'ev G.¹^,2, Constantinian K.¹, Moskal' Y.², Ovsyannikov G.¹, Shadrin A.¹^,3
隶属关系:
1. Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
2. National Research University Higher School of Economics
期: 卷 68, 编号 10 (2023)
页面: 984-988
栏目: НАНОЭЛЕКТРОНИКА
URL: https://journals.rcsi.science/0033-8494/article/view/232582
DOI: https://doi.org/10.31857/S0033849423100194
EDN: https://elibrary.ru/DMYCRX
ID: 232582

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详细

The results of the experimental determination of the spin Hall angle in a two-layer metal/ferromagnet structure Pt/La_0.7 Sr_0.3 MnO_3, obtained from the angular dependences of the longitudinal and transverse spin magnetoresistance in the planar Hall effect configuration are presented. The spin Hall angle determined from the longitudinal magnetoresistance was θ_Hx ≈ 0.016, and from transverse θ_Hy ≈ 0.018, while for SrIrO_3/La_0.7 Sr_0.3 MnO_3 heterostructures the ratio of the transverse to longitudinal spin Hall angle turned out to be significantly higher, θ_Hy/θ_Hx ≈ 9, which is most likely caused by the formation of a layer with high conductivity at the SrIrO_3 boundary /La_0.7 Sr_0.3 MnO_3.

关键词

spin Hall angle, two-layer metal/ferromagnet structure, longitudinal and transverse spin magnetoresistance

参考

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