Series Connection of a Memristor with Other Discrete Elements: Resistor, Semiconductor Diode, Inductive Coil, and Capacitance
- 作者: Kitaev A.1, Belov A.2, Huseynov D.2, Mikhailov A.2
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隶属关系:
- Nizhny Novgorod Research and Production Association
- Nizhny Novgorod State University
- 期: 卷 68, 编号 3 (2023)
- 页面: 295-304
- 栏目: НАНОЭЛЕКТРОНИКА
- URL: https://journals.rcsi.science/0033-8494/article/view/138144
- DOI: https://doi.org/10.31857/S0033849423020080
- EDN: https://elibrary.ru/LCIACU
- ID: 138144
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详细
A transition is made from piecewise continuous functions of the memristor model with threshold type switching to differentiable functions described by a single formula. Systems of equations are obtained and numerically solved for circuit sections in which the memristive device is connected in series with other discrete elements, a conventional resistor, diode, inductor, and capacitor. For the case of a serial connection of a memristor and a resistor, the calculated data are compared with the experiment. The case of series connection of a memristor and a semiconductor diode has been studied in detail. The assumptions concerning the mathematical description and physical interpretation of the influence of the molding process on the memristive system are presented.
作者简介
A. Kitaev
Nizhny Novgorod Research and Production Association
Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603950 Russia
A. Belov
Nizhny Novgorod State University
Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia
D. Huseynov
Nizhny Novgorod State University
Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia
A. Mikhailov
Nizhny Novgorod State University
编辑信件的主要联系方式.
Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia
参考
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