Series Connection of a Memristor with Other Discrete Elements: Resistor, Semiconductor Diode, Inductive Coil, and Capacitance

Cover Page

Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

A transition is made from piecewise continuous functions of the memristor model with threshold type switching to differentiable functions described by a single formula. Systems of equations are obtained and numerically solved for circuit sections in which the memristive device is connected in series with other discrete elements, a conventional resistor, diode, inductor, and capacitor. For the case of a serial connection of a memristor and a resistor, the calculated data are compared with the experiment. The case of series connection of a memristor and a semiconductor diode has been studied in detail. The assumptions concerning the mathematical description and physical interpretation of the influence of the molding process on the memristive system are presented.

About the authors

A. E. Kitaev

Nizhny Novgorod Research and Production Association

Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603950 Russia

A. I. Belov

Nizhny Novgorod State University

Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia

D. V. Huseynov

Nizhny Novgorod State University

Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia

A. N. Mikhailov

Nizhny Novgorod State University

Author for correspondence.
Email: kitaev_a_e@mail.ru
Nizhny Novgorod, 603022 Russia

References

  1. Chua L.O. // IEEE Trans. 1971. V. CT-18. № 5. P. 507.
  2. Chua L.O., Kang S. // Proc. IEEE. 1976. V. 64. № 2. P. 209.
  3. Strukov D.B., Snider G.S., Stewart D.R., Williams R.S. // Nature. 2008. V. 453. P. 80.
  4. Mikhaylov A., Pimashkin A., Pigareva Y. et al. // Frontiers in Neuroscience. 2020. V. 14. P. 358.
  5. Xu W., Wang J., Yan X. // Frontiers in Nanotechnology. 2021. V. 3. P. 1.
  6. Pershin Y.P., La Fontaine S., Di Ventra M. // Phys Rev. E. 2009. V. 80. P. 021926.
  7. Joglekar Y.N., Wolf S.J. // Eur. J. Phys. 2009. V. 30. P. 661.
  8. Mutlu R. // Turk. J. Elec. Eng. Comp. Sci. 2015. V. 23. P. 1219.
  9. Pisarev A., Busygin A., Udovichenko S., Maevsky O. // Microelectronic Engineering. 2018. V. 198. P. 1.
  10. Biolek Z., Di Ventra M., Pershin Y. V. // Radioengineering. 2013. V. 22. P. 945.
  11. Удовиченко С.Ю., Писарев А.Д., Бусыгин А.Н., Бобылев А.Н. // Наноиндустрия. 2020. Т. 13. № 7–8. С. 466.
  12. Emelyanov A.V., Nikiruy K.E., Demin V.A. et al. // Microelectronic Engineering. 2019. V. 215. P. 110988.
  13. Upadhyay N.K., Sun W., Lin P. et al. // Adv. Electron. Mater. 2020. V. 6. № 5. P. 1901411.
  14. Guseinov D.V., Tetelbaum D.I., Mikhaylov A.N. et al. // Intern. J. Nanotechnology. 2017. V. 14. № 7/8. P. 604.
  15. Guseinov D.V., Mikhaylov A.N., Pershin Y.P. // IEEE Trans. 2022. V. CS-II-69. №3. P. 1802.
  16. Biolek Z., Biolek D., Biolkova V. // Radioengineering. 2009. V. 18. P. 210.
  17. Kvatinsky S., Friedman E. G., Kolodny A. et al. // IEEE Trans. 2013. V. CS-I-60. № 1. P. 211.
  18. Yakopcic C., Taha T. M., Subramanyam G. et al. // IEEE Electron Device Lett. 2011. V. 32. № 10. P. 1436.
  19. Filatov D.O., Koryazhkina M.N., Novikov A.S. et al. // Chaos, Solitons and Fractals. 2022. V. 156. P. 111810.
  20. Banwell T.C., Jayakumar A. // Electronics Lett. 2000. V. 36. № 4. P. 291.
  21. Дубинов А.Е., Дубинова И.Д., Сайков С.К. W-функция Ламберта и ее применение в математических задачах физики. Саров: РФЯЦ-ВНИИЭФ, 2006.
  22. Zhevnenko D., Meshchaninov F., Kozhevnikov V. et al. // Chaos, Solitons & Fractals. 2021. V. 142. P. 110382.
  23. Meshchaninov F.P., Zhevnenko D.A., Kozhevnikov V.S. et al. // Micromachines. 2021. V. 12. № 10. P. 1201.
  24. Zhevnenko D.A., Meshchaninov F.P., Kozhevnikov V.S. et al. // Micromachines. 2021. V. 12. № 10. P. 1220.
  25. Ярмаркин В.К., Шульман С.Г., Леманов В.В. // ФТТ. 2008. Т. 50. № 10. С. 1767.
  26. Ryu J.H., Hussain F., Mahata C. et al. // Appl. Surf. Sci. 2020. V. 529. P. 147167.
  27. Guseinov D.V., Korolev D.S., Belov A.I. et al. // Model. Simul. Mater. Sci. Eng. 2020. V. 28. P. 015007.

Supplementary files


Copyright (c) 2023 А.Е. Китаев, А.И. Белов, Д.В. Гусейнов, А.Н. Михайлов

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies