Peculiarities of the Formation and Growth of Thin Gold Films on the Surface of Gallium Arsenide during Thermal Evaporation in Vacuum
- Autores: Bryantseva T.1, Lyubchenko V.1, Lyubchenko D.2, Markov I.1, Ten Y.1
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Afiliações:
- Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
- Department of Micro and Nanosystems, KTH Royal Institute of Technology
- Edição: Volume 68, Nº 5 (2023)
- Páginas: 461-469
- Seção: НАНОЭЛЕКТРОНИКА
- URL: https://journals.rcsi.science/0033-8494/article/view/138243
- DOI: https://doi.org/10.31857/S0033849423050030
- EDN: https://elibrary.ru/UHIIFI
- ID: 138243
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Resumo
Changes in the morphology and structure of the GaAs surface during the deposition of an Au film by thermal evaporation in vacuum have been studied. It has been found that the deposition of an Au film with the participation of a flow of particles and light from a heated evaporator causes the appearance of photoeffects in the near-surface GaAs layers, including light diffraction on surface acoustic waves, the growth of whiskers, and electron emission, which leads to the formation of microcracks on the GaAs surface and the growth of GaAs crystallites. It is shown that the structure and composition of the film boundaries of Au and GaAs surfaces depend on the electron concentration in gallium arsenide, which ultimately determines the properties of the electrophysical parameters of the Au–GaAs contacts.
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Sobre autores
T. Bryantseva
Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: bryantseva44@mail.ru
Fryazino, Moscow oblast, 141120 Russia
V. Lyubchenko
Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: bryantseva44@mail.ru
Fryazino, Moscow oblast, 141120 Russia
D. Lyubchenko
Department of Micro and Nanosystems, KTH Royal Institute of Technology
Email: bryantseva44@mail.ru
Stockholm, 10044 Sweden
I. Markov
Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: bryantseva44@mail.ru
Fryazino, Moscow oblast, 141120 Russia
Yu. Ten
Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: bryantseva44@mail.ru
Fryazino, Moscow oblast, 141120 Russia
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