The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation


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Abstract

A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to the negative differential conductivity.

About the authors

V. Ch. Zhukovskii

Department of Physics

Author for correspondence.
Email: ulchzh@gmail.com
Russian Federation, Moscow, 119991

N. S. Prudskikh

Department of Theoretical Physics, Institute of Physics and Chemistry

Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005

S. E. Golovatyuk

Department of Theoretical Physics, Institute of Physics and Chemistry

Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005

V. D. Krevchik

Faculty of Instrument Engineering, Information Systems, Technology, and Electronics

Email: ulchzh@gmail.com
Russian Federation, Penza, 440026

M. B. Semenov

Faculty of Instrument Engineering, Information Systems, Technology, and Electronics

Email: ulchzh@gmail.com
Russian Federation, Penza, 440026

A. V. Shorokhov

Department of Theoretical Physics, Institute of Physics and Chemistry

Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005

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