Email this article The Stability Criterion of a Semiconductor Superlattice in the Drift–Diffusion Approximation
- Authors: Zhukovskii V.C.1, Prudskikh N.S.2, Golovatyuk S.E.2, Krevchik V.D.3, Semenov M.B.3, Shorokhov A.V.2
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Affiliations:
- Department of Physics
- Department of Theoretical Physics, Institute of Physics and Chemistry
- Faculty of Instrument Engineering, Information Systems, Technology, and Electronics
- Issue: Vol 73, No 4 (2018)
- Pages: 398-400
- Section: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/165026
- DOI: https://doi.org/10.3103/S0027134918040173
- ID: 165026
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Abstract
A criterion for the electric stability of a semiconductor superlttice placed in a longitudinal electric field has been obtained using the drift–diffusion approximation. It is demonstrated that the account for the contact ohmicity yields a stability criterion that is different from that related to the negative differential conductivity.
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About the authors
V. Ch. Zhukovskii
Department of Physics
Author for correspondence.
Email: ulchzh@gmail.com
Russian Federation, Moscow, 119991
N. S. Prudskikh
Department of Theoretical Physics, Institute of Physics and Chemistry
Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005
S. E. Golovatyuk
Department of Theoretical Physics, Institute of Physics and Chemistry
Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005
V. D. Krevchik
Faculty of Instrument Engineering, Information Systems, Technology, and Electronics
Email: ulchzh@gmail.com
Russian Federation, Penza, 440026
M. B. Semenov
Faculty of Instrument Engineering, Information Systems, Technology, and Electronics
Email: ulchzh@gmail.com
Russian Federation, Penza, 440026
A. V. Shorokhov
Department of Theoretical Physics, Institute of Physics and Chemistry
Email: ulchzh@gmail.com
Russian Federation, Saransk, 430005
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