Email this article Hot Electrons in InxGa1–xN and InxAl1–xN Binary Solid Solutions
- Authors: Masyukov N.A.1, Dmitriev A.V.1
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Affiliations:
- Department of Physics
- Issue: Vol 73, No 3 (2018)
- Pages: 325-328
- Section: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/165004
- DOI: https://doi.org/10.3103/S0027134918030116
- ID: 165004
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Abstract
The nonlinear field dependences of the hot electron drift velocity have been calculated by means of numerical solution of the Boltzman kinetic equation in two families of nitride semiconductor solid solutions: InxGa1–xN and InxAl1–xN. The calculations have been carried out in the electric field up to 30 kV/cm at lattice temperatures of 77 and 300 K, and for electron concentrations of 1 × 1018 and 1 × 1019 cm–3. In the calculations, the composition x has been taken as 0, 0.25, 0.5, 0.75, and 1 for both alloys.
About the authors
N. A. Masyukov
Department of Physics
Email: Dmitriev@lt.phys.msu.su
Russian Federation, Moscow, 119991
A. V. Dmitriev
Department of Physics
Author for correspondence.
Email: Dmitriev@lt.phys.msu.su
Russian Federation, Moscow, 119991
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