Hot Electrons in InxGa1–xN and InxAl1–xN Binary Solid Solutions

Аннотация

The nonlinear field dependences of the hot electron drift velocity have been calculated by means of numerical solution of the Boltzman kinetic equation in two families of nitride semiconductor solid solutions: In_xGa_1–xN and In_xAl_1–xN. The calculations have been carried out in the electric field up to 30 kV/cm at lattice temperatures of 77 and 300 K, and for electron concentrations of 1 × 10¹⁸ and 1 × 10¹⁹ cm^–3. In the calculations, the composition x has been taken as 0, 0.25, 0.5, 0.75, and 1 for both alloys.