High-performance modeling of the deposition of a silicon dioxide thin film using the LAMMPS program


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Abstract

Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known from the literature. An analysis of the structure of the deposited film (density, radial distribution function, concentration of defects) was carried out.

About the authors

A. A. Gorokh

Research Computing Center

Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991

F. V. Grigoriev

Research Computing Center

Author for correspondence.
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991

E. V. Katkova

Research Computing Center

Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991

A. V. Sulimov

Research Computing Center

Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991

S. A. Sharapova

Research Computing Center

Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991

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