Email this article High-performance modeling of the deposition of a silicon dioxide thin film using the LAMMPS program
- Authors: Gorokh A.A.1, Grigoriev F.V.1, Katkova E.V.1, Sulimov A.V.1, Sharapova S.A.1
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Affiliations:
- Research Computing Center
- Issue: Vol 71, No 1 (2016)
- Pages: 114-117
- Section: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164421
- DOI: https://doi.org/10.3103/S0027134916010070
- ID: 164421
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Abstract
Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known from the literature. An analysis of the structure of the deposited film (density, radial distribution function, concentration of defects) was carried out.
About the authors
A. A. Gorokh
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
F. V. Grigoriev
Research Computing Center
Author for correspondence.
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
E. V. Katkova
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
A. V. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
S. A. Sharapova
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
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