Отправить статью по E-mail High-performance modeling of the deposition of a silicon dioxide thin film using the LAMMPS program
- Авторы: Gorokh A.A.1, Grigoriev F.V.1, Katkova E.V.1, Sulimov A.V.1, Sharapova S.A.1
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Учреждения:
- Research Computing Center
- Выпуск: Том 71, № 1 (2016)
- Страницы: 114-117
- Раздел: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164421
- DOI: https://doi.org/10.3103/S0027134916010070
- ID: 164421
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Аннотация
Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known from the literature. An analysis of the structure of the deposited film (density, radial distribution function, concentration of defects) was carried out.
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Об авторах
A. Gorokh
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
F. Grigoriev
Research Computing Center
Автор, ответственный за переписку.
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
E. Katkova
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
A. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
S. Sharapova
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
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