Localization of aluminum in ZnO: Al layers during magnetron sputtering deposition

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Abstract

The features of aluminum localization and the mechanism of donor center formation in ZnO:Al layers synthesized by high-frequency magnetron sputtering are studied. It is shown that aluminum predominantly localizes at grain boundaries of zinc oxide in its own oxide phase. The mechanism of aluminum oxidation at grain boundaries significantly depends on the oxygen content in the working chamber: during sputtering in an atmosphere of pure argon under conditions of oxygen deficiency, aluminum oxidation occurs as a result of interaction with oxygen from the surface layer of zinc oxide crystallites, forming surface donor centers at grain boundaries. With an increase in the partial pressure of oxygen, aluminum is predominantly oxidized by oxygen from the gas atmosphere, forming its own barrier phase at grain boundaries.

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About the authors

A. Sh. Asvarov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: a_abduev@mail.ru
Russian Federation, Moscow

A. E. Muslimov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: a_abduev@mail.ru
Russian Federation, Moscow

V. M. Kanevsky

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: a_abduev@mail.ru
Russian Federation, Moscow

A. K. Akhmedov

Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences

Email: a_abduev@mail.ru
Russian Federation, Makhachkala

A. Kh. Abduev

The Federal State University of Education

Author for correspondence.
Email: a_abduev@mail.ru
Russian Federation, Mytishchi

Z. Kh. Kalazhokov

H. M. Berbekov Kabardino-Balkarian State University

Email: a_abduev@mail.ru
Russian Federation, Nalchik

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Supplementary files

Supplementary Files
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2. Fig. 1. Diffractograms of ZnO:3%Al (a, b) and ZnO:6%Al (c, d) layers deposited at substrate temperatures of 50 (a, c) and 300°C (b, d) in the atmosphere of the working gas Ar and Ar–O2

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3. Fig. 2. TEM image of a ZnO:6%Al layer deposited at a substrate temperature of 300°C

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4. Fig. 3. Energy dispersion analysis data on the distribution of chemical elements near the substrate–layer interface for the ZnO:6%Al layer deposited at a substrate temperature of 300 °C

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5. Fig. 4. Energy dispersion analysis data on the distribution of chemical elements in a ZnO:6%Al layer deposited at a substrate temperature of 300 °C along a line crossing the pillars parallel to the substrate

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6. Fig. 5. Overview X-ray spectrum of the ZnO sample:6%Al

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7. Fig. 6. Regions of the X-ray spectrum with Zn2p, Zn2p3/2 (a) and Zn LMM (b) reflexes

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8. Fig. 7. Regions of the XFE spectrum with O1s (a) and Al2p (b) reflexes

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9. Fig. 8. Dependences of the surface resistance RS of the ZnO:3%Al (1) and ZnO:6%Al(2) layers on the substrate temperature

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10. Fig. 9. Architecture of the multilayer Al2O3/ZnO structure

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