Localization of aluminum in ZnO: Al layers during magnetron sputtering deposition
- 作者: Asvarov A.S.1, Muslimov A.E.1, Kanevsky V.M.1, Akhmedov A.K.2, Abduev A.K.3, Kalazhokov Z.K.4
-
隶属关系:
- Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
- Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences
- The Federal State University of Education
- H. M. Berbekov Kabardino-Balkarian State University
- 期: 卷 69, 编号 2 (2024)
- 页面: 303-313
- 栏目: ПОВЕРХНОСТЬ, ТОНКИЕ ПЛЕНКИ
- URL: https://journals.rcsi.science/0023-4761/article/view/259701
- DOI: https://doi.org/10.31857/S0023476124020147
- EDN: https://elibrary.ru/YSGBUY
- ID: 259701
如何引用文章
详细
The features of aluminum localization and the mechanism of donor center formation in ZnO:Al layers synthesized by high-frequency magnetron sputtering are studied. It is shown that aluminum predominantly localizes at grain boundaries of zinc oxide in its own oxide phase. The mechanism of aluminum oxidation at grain boundaries significantly depends on the oxygen content in the working chamber: during sputtering in an atmosphere of pure argon under conditions of oxygen deficiency, aluminum oxidation occurs as a result of interaction with oxygen from the surface layer of zinc oxide crystallites, forming surface donor centers at grain boundaries. With an increase in the partial pressure of oxygen, aluminum is predominantly oxidized by oxygen from the gas atmosphere, forming its own barrier phase at grain boundaries.
全文:

作者简介
A. Asvarov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: a_abduev@mail.ru
俄罗斯联邦, Moscow
A. Muslimov
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: a_abduev@mail.ru
俄罗斯联邦, Moscow
V. Kanevsky
Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
Email: a_abduev@mail.ru
俄罗斯联邦, Moscow
A. Akhmedov
Amirkhanov Institute of Physics, Dagestan Federal Research Center, Russian Academy of Sciences
Email: a_abduev@mail.ru
俄罗斯联邦, Makhachkala
A. Abduev
The Federal State University of Education
编辑信件的主要联系方式.
Email: a_abduev@mail.ru
俄罗斯联邦, Mytishchi
Z. Kalazhokov
H. M. Berbekov Kabardino-Balkarian State University
Email: a_abduev@mail.ru
俄罗斯联邦, Nalchik
参考
- Boscarino S., Crupi I., Mirabella S. et al. // Physica A. 2014. V. 116. P. 1287. https://doi.org/10.1007/s00339-014-8222-9
- Afre R.A., Sharma N., Sharon M. et al. // Rev. Adv. Mater. Sci. 2018. V. 53. P. 79.
- Cohen D.J., Barnett S.A. // J. Appl. Phys. 2005. V. 98. P. 053705. https://doi.org/10.1063/1.2035898
- Akhmedov A., Abduev A., Murliev E. et al. // Materials. 2023. V. 16. P. 3740. https://doi.org/10.3390/ma16103740
- Meng F., Ge F., Chen Y. et al. // Surf. Coat. Technol. 2018. V. 365. P. 2. https://doi.org/10.1016/j.surfcoat.2018.04.013
- Abduev A., Akhmedov A., Asvarov A. et al. // SID Symposium Digest of Technical Papers. 2019. V. 50. P. 977. https://doi.org/10.1002/sdtp.13089
- Asvarov A.S., Abduev A.K., Akhmedov A.K. et al. // Materials. 2022. V. 15. P. 5862. https://doi.org/10.3390/ma15175862
- Ellmer K., Mientus R. // Thin Solid Films. 2008. V. 516. P. 5829. https://doi.org/10.1016/j.tsf.2007.10.082
- Wu Y., Giddings A.D., Verheijen M.A. et al. // Chem. Mater. 2018. V. 30. P. 1209. https://doi.org/10.1021/acs.chemmater.7b03501
- Jose J., Khadar M.A. // Mater. Sci. Eng. A. 2001. V. 304–306. P. 810. https://doi.org/10.1016/S0921-5093(00)01579-3
- Reiche M., Kittler M., Krause H.M. // Solid State Phenom. 2013. V. 205–206. P. 293. https://doi.org/10.4028/www.scientific.net/ssp.205-206.293
- Лашкова Н.А., Максимов А.И., Матюшкин Л.Б. и др. // Бутлеровские сообщения. 2015. Т. 42. № 6. С. 48.
- El-Shaarawy M.G., Khairy M., Mousa M.A. // Adv. Powder Technol. 2020. V. 31. P. 1333. https://doi.org/10.1016/j.apt.2020.01.009
- Liu J., Huang X., Duan J. et al. // Mater. Lett. 2005. V. 59. P. 3710. https://doi.org/10.1016/j.matlet.2005.06.043
- Abduev A., Akhmedov A., Asvarov A. // J. Phys. Conf. Ser. 2011. V. 291. P. 012039. https://doi.org/10.1088/1742-6596/291/1/012039
- Khlayboonme S.T., Thowladda W. // Mater. Res. Express. 2021. V. 8. P. 076402. https://doi.org/10.1088/2053-1591/ac113d
- Nasr B., Dasgupta S., Wang D. et al. // J. Appl. Phys. 2010. V. 108. P. 103721. https://doi.org/10.1063/1.3511346
- Novák P., Kozák T., Šutta P. et al. // Phys. Status Solidi. A. 2018. V. 215. https://doi.org/10.1002/pssa.201700951
- Sieber I., Wanderka N., Urban I. et al. // Thin Solid Films. 1998. V. 330. P. 108. https://doi.org/10.1016/S0040-6090(98)00608-7
- Bikowski A., Rengachari M., Nie M. et al. // APL Mater. 2015. V. 3. P. 060701. https://doi.org/10.1063/1.4922152
- Fiermans L., Vennik J., Dekeyser W. // J. Surf. Sci. 1975. V. 63. P. 390.
- Semiletov A.M., Chirkunov A.A., Grafov O.Y. // Coatings. 2022. V. 12. P. 1468. https://doi.org/10.3390/coatings12101468
- Potter D.B., Parkin I.P., Carmal C.J. // RSC Adv. 2018. V. 8. P. 33164. https://doi.org/10.1039/c8ra06417b
- Daza L.G., Martin-Tovar E.A., Castro-Rodriguez R. // Inorg. Organomet. Polym. 2017. V. 27. P. 1563. https://doi.org/10.1007/s10904-017-0617-6
- Li L., Fang L., Zhou X.J. et al. // J. Electron Spectros. Relat. Phenomena. 2009. V. 173. P. 7. https://doi.org/10.1016/j.elspec.2009.03.001
- Tong C., Yun J., Chen Y.-J. et al. // ACS Appl. Mater. Interfaces. 2016. V. 8. P. 3985. https://doi.org/10.1021/acsami.5b11285
- Sky T.N., Johansen K.M., Venkatachalapathy V. et al. // Phys. Rev. B. 2018. V. 98. P. 245204. https://doi.org/10.1103/PhysRevB.98.245204
- Kim H.-K., Seong T.-Y., Kim K.-K. et al. // Jpn. J. Appl. Phys. 2004. V. 43. P. 976. https://doi.org/10.1143/JJAP.43.976
- Wei J., Ogawa T., Feng B et al. // Nano Lett. 2020. V. 20. P. 2530. https://doi.org/10.1021/acs.nanolett.9b05298
- Моррисон С. Химическая физика поверхности твердого тела. М.: Мир, 1980. 488 с.
- Ryabko A.A., Mazing D.S., Bobkov A.A. et al. // Phys. Solid State. 2022. V. 64. P. 1657. https://doi.org/10.21883/PSS.2022.11.54187.408
补充文件
