THE STUDY OF GROWTH DEFECTS IN CUBIC SINGLE CRYSTALS OF SYNTHETIC DIAMOND USING X-RAY TOPO-TOMOGRAPHY
- Авторлар: Anisimov N.1,2, Zolotov D.1, Buzmakov A.1, Dyachkova I.1, Asadchikov V.3
-
Мекемелер:
- Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
- Moscow State University, Moscow, 119234 Russia
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
- Шығарылым: Том 68, № 4 (2023)
- Беттер: 507-513
- Бөлім: ДИФРАКЦИЯ И РАССЕЯНИЕ ИОНИЗИРУЮЩИХ ИЗЛУЧЕНИЙ
- URL: https://journals.rcsi.science/0023-4761/article/view/137420
- DOI: https://doi.org/10.31857/S0023476123600192
- EDN: https://elibrary.ru/JPDLWB
- ID: 137420
Дәйексөз келтіру
Аннотация
The spatial distribution of linear defects in cuboctahedral single crystals of synthetic diamonds, grown under laboratory conditions by the high-pressure high-temperature (HPHT) method near the diamond–graphite equilibrium line, has been studied. Synthetic diamonds of this type have been studied for the first time by the X-ray topo-tomography using a laboratory X-ray source.
Негізгі сөздер
Авторлар туралы
N. Anisimov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia; Moscow State University, Moscow, 119234 Russia
Email: anisimov.np17@physics.msu.ru
Россия, Москва; Россия, Москва
D. Zolotov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: anisimov.np17@physics.msu.ru
Россия, Москва
A. Buzmakov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: anisimov.np17@physics.msu.ru
Россия, Москва
I. Dyachkova
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: anisimov.np17@physics.msu.ru
Россия, Москва
V. Asadchikov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Хат алмасуға жауапты Автор.
Email: asad@crys.ras.ru
Россия, Москва
Әдебиет тізімі
- Kasu M. // Prog. Cryst. Growth Charact. Mater. 2016. V. 62. P. 317.
- D’Haenens-Johansson U.F.S., Butler J.E., Katrusha A.N. // Rev. Mineral. Geochem. 2022. V. 88. P. 689.
- Akashi N., Fujimaki N., Shikata S. // Diam. Relat. Mater. 2020. V. 109. P. 108024.
- Боуэн Д.К., Таннер Б.К. Высокоразрешающая рентгеновская дифрактометрия и топография / Пер. с англ. Шульпиной И.Л., Аргуновой Т.С. СПб.: Наука, 2002. 256 p.
- Black D.R., Long G.G. X-ray topography. Gaithersburg: National Institute of Standards and Technology, 2004. 53 p.
- Authier A. Dynamical theory of x-ray diffraction. 2-nd ed. Oxford University Press, 2004. 674 p.
- Shikata S., Miyajima K., Akashi N. // Diam. Relat. Mater. 2021. V. 118. P. 108502.
- Hornstra J. // J. Phys. Chem. Solids. 1958. V. 5. № 1–2. P. 129.
- Ludwig W., Cloetens P., Härtwig J. et al. // J. Appl. Cryst. 2001. V. 34. № 5. P. 602.
- Золотов Д.А., Бузмаков А.В., Асадчиков В.Е. и др. // Кристаллография. 2011. Т. 56. № 3. С. 426.
- Золотов Д.А., Бузмаков А.В., Елфимов Д.А. и др. // Кристаллография. 2017. Т. 62. № 1. С. 12.
- Золотов Д.А., Асадчиков В.Е., Бузмаков А.В. и др. // Письма в ЖЭТФ. 2021. Т. 113. № 3. С. 161.
- Lang A.R. // Acta Cryst. 1959. V. 2. P. 249.
- Eaton-Magaña S., Shigley J.E., Breeding C.M. // Gems Gemol. 2017. V. 53. P. 262.
- Andersen A.H., Kak A.C. // Ultrason. Imag. 1984. V. 6. P. 81.
- Palenstijn W.J., Batenburg K.J., Sijbers J. // J. Struct. Biol. 2011. V. 176. P. 250.
- Van Aarle W., Palenstijn W.J., De Beenhower J. et al. // Ultramicroscopy. 2015. V. 157. P. 35.
- Gonzales R., Woods R. Digital image processing. 4-th ed. Pearson education India, 2009. 1168 p.
- Sumiya H., Tamasaku K. // Jpn. J. Appl. Phys. 2012. V. 51. P. 090102.
- Sumiya H., Toda N., Satoh S. // SEI Tech. Rev. 2005. V. 60. P. 10.
- Moore M., Nailer S., Wierzchowski W. // Crystals. 2016. V. 6. P. 71.