COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD
- Autores: Volkovsky Y.1, Zhernova V.1, Folomeshkin M.2,3, Prosekov P.1, Muslimov A.1, Butashin A.1, Ismailov A.4, Grigoriev Y.1, Pisarevsky Y.1, Kanevsky V.1,5
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Afiliações:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
- National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia
- Dagestan State University, Makhachkala, Republic of Dagestan, 36700 Russia
- National Research Centre “Kurchatov Institute,” Moscow, 123182 Russia
- Edição: Volume 68, Nº 2 (2023)
- Páginas: 180-188
- Seção: ДИФРАКЦИЯ И РАССЕЯНИЕ ИОНИЗИРУЮЩИХ ИЗЛУЧЕНИЙ
- URL: https://journals.rcsi.science/0023-4761/article/view/137353
- DOI: https://doi.org/10.31857/S0023476123020212
- EDN: https://elibrary.ru/BTJWEV
- ID: 137353
Citar
Resumo
The results of studying the specific features of the growth of zinc oxide films formed on sapphire substrates by magnetron sputtering in an inhomogeneous electric field are presented. The films have been analyzed by high-resolution X-ray diffractometry, pole figure technique, and electron microscopy. A sequence of changes in the lateral structure with an increase in the film thickness, which depends also on the local potential, is revealed. Thus, regions with a higher surface potential correspond to the ZnOá10 0ñ(0001)||Al2O3á11 0ñ(0001) epitaxial ratio with the least lattice mismatch.
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Sobre autores
Yu. Volkovsky
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
V. Zhernova
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
M. Folomeshkin
National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia
Email: folmaxim@gmail.com
Россия, Москва; Россия, Москва
P. Prosekov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
A. Muslimov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: amuslimov@mail.ru
Россия, Москва
A. Butashin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
A. Ismailov
Dagestan State University, Makhachkala, Republic of Dagestan, 36700 Russia
Email: irlandez08@yandex.ru
Россия, Республика Дагестан, Махачкала
Yu/ Grigoriev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
Yu. Pisarevsky
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia
Email: irlandez08@yandex.ru
Россия, Москва
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”Russian Academy of Sciences, Moscow, 119333 Russia; National Research Centre “Kurchatov Institute,” Moscow, 123182 Russia
Autor responsável pela correspondência
Email: irlandez08@yandex.ru
Россия, Москва; Россия, Москва
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