Low Temperature Characteristics of Electronic Density of States in Epitaxial Graphene


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Abstract

We propose a novel approach which considers the positions of defects in graphene structure to describe how electronic density of states and the type of graphene conductivity are affected by electron scattering by certain configurations of foreign atoms in graphene matrix. Despite the fact that there is still insufficient experimental data concerning the effect of short-range order on graphene physical properties, we assume that local disorder can play a decisive role in the low-temperature behavior of graphene’s electronic properties.

About the authors

N. G. Bobenko

Institute of Strength Physics and Materials Science of SB RAS; National Research Tomsk Polytechnic University

Author for correspondence.
Email: alex@ispms.tsc.ru
Russian Federation, Tomsk; Tomsk

V. E. Egorushkin

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
Russian Federation, Tomsk

N. V. Melnikova

Kuznetsov Siberian Physical Technical Institute of Tomsk State University

Email: alex@ispms.tsc.ru
Russian Federation, Tomsk

A. A. Belosludtseva

Institute of Strength Physics and Materials Science of SB RAS; Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
Russian Federation, Tomsk; Tomsk

L. D. Barkalov

Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
Russian Federation, Tomsk

A. N. Ponomarev

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
Russian Federation, Tomsk

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