Low Temperature Characteristics of Electronic Density of States in Epitaxial Graphene


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We propose a novel approach which considers the positions of defects in graphene structure to describe how electronic density of states and the type of graphene conductivity are affected by electron scattering by certain configurations of foreign atoms in graphene matrix. Despite the fact that there is still insufficient experimental data concerning the effect of short-range order on graphene physical properties, we assume that local disorder can play a decisive role in the low-temperature behavior of graphene’s electronic properties.

作者简介

N. Bobenko

Institute of Strength Physics and Materials Science of SB RAS; National Research Tomsk Polytechnic University

编辑信件的主要联系方式.
Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk; Tomsk

V. Egorushkin

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk

N. Melnikova

Kuznetsov Siberian Physical Technical Institute of Tomsk State University

Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk

A. Belosludtseva

Institute of Strength Physics and Materials Science of SB RAS; Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk; Tomsk

L. Barkalov

Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk

A. Ponomarev

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
俄罗斯联邦, Tomsk

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