Silicon Film Deposition Using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation

Аннотация

This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasmachemical method. A numerical model of gas mixtures flowing out of an annular nozzle unit and into a reactor is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and satisfactorily describes the experimental data obtained.