Silicon Film Deposition Using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation
- Авторы: Sharafutdinov R.G.1, Skovorodko P.A.1, Shchukin V.G.1, Konstantinov V.O.1
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Учреждения:
- Kutateladze Institute of Thermophysics, Siberian Branch
- Выпуск: Том 59, № 5 (2018)
- Страницы: 786-793
- Раздел: Article
- URL: https://journals.rcsi.science/0021-8944/article/view/161289
- DOI: https://doi.org/10.1134/S0021894418050036
- ID: 161289
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Аннотация
This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasmachemical method. A numerical model of gas mixtures flowing out of an annular nozzle unit and into a reactor is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and satisfactorily describes the experimental data obtained.
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Об авторах
R. Sharafutdinov
Kutateladze Institute of Thermophysics, Siberian Branch
Автор, ответственный за переписку.
Email: molkin@itp.nsc.ru
Россия, Novosibirsk, 630090
P. Skovorodko
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Россия, Novosibirsk, 630090
V. Shchukin
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Россия, Novosibirsk, 630090
V. Konstantinov
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Россия, Novosibirsk, 630090
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