Email this article Silicon Film Deposition Using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation
- Authors: Sharafutdinov R.G.1, Skovorodko P.A.1, Shchukin V.G.1, Konstantinov V.O.1
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Affiliations:
- Kutateladze Institute of Thermophysics, Siberian Branch
- Issue: Vol 59, No 5 (2018)
- Pages: 786-793
- Section: Article
- URL: https://journals.rcsi.science/0021-8944/article/view/161289
- DOI: https://doi.org/10.1134/S0021894418050036
- ID: 161289
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Abstract
This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasmachemical method. A numerical model of gas mixtures flowing out of an annular nozzle unit and into a reactor is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and satisfactorily describes the experimental data obtained.
About the authors
R. G. Sharafutdinov
Kutateladze Institute of Thermophysics, Siberian Branch
Author for correspondence.
Email: molkin@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
P. A. Skovorodko
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Shchukin
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. O. Konstantinov
Kutateladze Institute of Thermophysics, Siberian Branch
Email: molkin@itp.nsc.ru
Russian Federation, Novosibirsk, 630090
