Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well
- Authors: Gusev G.M.1, Olshanetsky E.B.2, Kvon Z.D.2,3, Magarill L.I.2,3, Entin M.V.2, Levin A.1, Mikhailov N.N.2
- 
							Affiliations: 
							- Instituto de Fisica da Universidade de Sao Paulo
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
 
- Issue: Vol 107, No 12 (2018)
- Pages: 789-793
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/161139
- DOI: https://doi.org/10.1134/S0021364018120081
- ID: 161139
Cite item
Abstract
The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.
About the authors
G. M. Gusev
Instituto de Fisica da Universidade de Sao Paulo
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Brazil, 							Sao Paulo, 135960-170						
E. B. Olshanetsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
							Author for correspondence.
							Email: eolsh@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
Z. D. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090; Novosibirsk, 630090						
L. I. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090; Novosibirsk, 630090						
M. V. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
A. Levin
Instituto de Fisica da Universidade de Sao Paulo
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Brazil, 							Sao Paulo, 135960-170						
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: eolsh@isp.nsc.ru
				                					                																			                												                	Russian Federation, 							Novosibirsk, 630090						
Supplementary files
 
				
			 
					 
						 
						 
						 
						 
				 
  
  
  
  
  Email this article
			Email this article  Open Access
		                                Open Access Access granted
						Access granted Subscription Access
		                                		                                        Subscription Access
		                                					