Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well
- 作者: Gusev G.M.1, Olshanetsky E.B.2, Kvon Z.D.2,3, Magarill L.I.2,3, Entin M.V.2, Levin A.1, Mikhailov N.N.2
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隶属关系:
- Instituto de Fisica da Universidade de Sao Paulo
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 107, 编号 12 (2018)
- 页面: 789-793
- 栏目: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/161139
- DOI: https://doi.org/10.1134/S0021364018120081
- ID: 161139
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详细
The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.
作者简介
G. Gusev
Instituto de Fisica da Universidade de Sao Paulo
Email: eolsh@isp.nsc.ru
巴西, Sao Paulo, 135960-170
E. Olshanetsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Levin
Instituto de Fisica da Universidade de Sao Paulo
Email: eolsh@isp.nsc.ru
巴西, Sao Paulo, 135960-170
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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