Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well


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The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.

作者简介

G. Gusev

Instituto de Fisica da Universidade de Sao Paulo

Email: eolsh@isp.nsc.ru
巴西, Sao Paulo, 135960-170

E. Olshanetsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

Z. Kvon

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

L. Magarill

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

M. Entin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Levin

Instituto de Fisica da Universidade de Sao Paulo

Email: eolsh@isp.nsc.ru
巴西, Sao Paulo, 135960-170

N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: eolsh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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