Magnetoresistance Scaling and the Anisotropy of Charge Carrier Scattering in the Paramagnetic Phase of Ho0.8Lu0.2B12 Cage Glass


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Аннотация

The transverse magnetoresistance of Ho0.8Lu0.2B12 dodecaboride with a cage glass structure is studied at low (2–10 K) temperatures. It is demonstrated that the isotropic negative magnetoresistance in this antiferromagnet is dominant within the broad temperature range near TN ≈ K. This contribution to the total magnetoresistance is due to the scattering of charge carriers by nanoclusters formed by Но3+ ions, and it can be scaled in the ρ = f2effH2/T2 ) representation. It is found that the magnetoresistance anisotropy above (about 15% at 80 kOe) is due to the positive contribution, which achieves maximum values at the magnetic field direction close to H ║ [001]. The anisotropy of the charge carrier scattering is interpreted in terms of the cooperative dynamic Jahn−Teller effect at В12 clusters.

Авторлар туралы

N. Sluchanko

Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)

Хат алмасуға жауапты Автор.
Email: nes@lt.gpi.ru
Ресей, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700

A. Khoroshilov

Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700

A. Bogach

Prokhorov General Physics Institute

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991

V. Voronov

Prokhorov General Physics Institute

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991

V. Glushkov

Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700

S. Demishev

Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700

V. Krasnorussky

Prokhorov General Physics Institute

Email: nes@lt.gpi.ru
Ресей, Moscow, 119991

K. Krasikov

Moscow Institute of Physics and Technology (State University)

Email: nes@lt.gpi.ru
Ресей, Dolgoprudnyi, Moscow region, 141700

N. Shitsevalova

Frantsevich Institute for Problems of Materials Science

Email: nes@lt.gpi.ru
Украина, Kyiv, 03680

V. Filipov

Frantsevich Institute for Problems of Materials Science

Email: nes@lt.gpi.ru
Украина, Kyiv, 03680

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