Magnetoresistance Scaling and the Anisotropy of Charge Carrier Scattering in the Paramagnetic Phase of Ho0.8Lu0.2B12 Cage Glass
- Autores: Sluchanko N.E.1,2, Khoroshilov A.L.1,2, Bogach A.V.1, Voronov V.V.1, Glushkov V.V.1,2, Demishev S.V.1,2, Krasnorussky V.N.1, Krasikov K.M.2, Shitsevalova N.Y.3, Filipov V.B.3
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Afiliações:
- Prokhorov General Physics Institute
- Moscow Institute of Physics and Technology (State University)
- Frantsevich Institute for Problems of Materials Science
- Edição: Volume 107, Nº 1 (2018)
- Páginas: 30-36
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160819
- DOI: https://doi.org/10.1134/S0021364018010125
- ID: 160819
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Resumo
The transverse magnetoresistance of Ho0.8Lu0.2B12 dodecaboride with a cage glass structure is studied at low (2–10 K) temperatures. It is demonstrated that the isotropic negative magnetoresistance in this antiferromagnet is dominant within the broad temperature range near TN ≈ K. This contribution to the total magnetoresistance is due to the scattering of charge carriers by nanoclusters formed by Но3+ ions, and it can be scaled in the ρ = f(μ2effH2/T2 ) representation. It is found that the magnetoresistance anisotropy above (about 15% at 80 kOe) is due to the positive contribution, which achieves maximum values at the magnetic field direction close to H ║ [001]. The anisotropy of the charge carrier scattering is interpreted in terms of the cooperative dynamic Jahn−Teller effect at В12 clusters.
Sobre autores
N. Sluchanko
Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)
Autor responsável pela correspondência
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700
A. Khoroshilov
Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700
A. Bogach
Prokhorov General Physics Institute
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991
V. Voronov
Prokhorov General Physics Institute
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991
V. Glushkov
Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700
S. Demishev
Prokhorov General Physics Institute; Moscow Institute of Physics and Technology (State University)
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991; Dolgoprudnyi, Moscow region, 141700
V. Krasnorussky
Prokhorov General Physics Institute
Email: nes@lt.gpi.ru
Rússia, Moscow, 119991
K. Krasikov
Moscow Institute of Physics and Technology (State University)
Email: nes@lt.gpi.ru
Rússia, Dolgoprudnyi, Moscow region, 141700
N. Shitsevalova
Frantsevich Institute for Problems of Materials Science
Email: nes@lt.gpi.ru
Ucrânia, Kyiv, 03680
V. Filipov
Frantsevich Institute for Problems of Materials Science
Email: nes@lt.gpi.ru
Ucrânia, Kyiv, 03680
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