Superconductor–Insulator Transition in NbTiN Films


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition Tc according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.

作者简介

M. Burdastyh

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

S. Postolova

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

T. Baturina

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

T. Proslier

Institut de recherches sur les lois fundamentales de l’univers; Materials Science Division

Email: mironov@isp.nsc.ru
法国, Gif-sur-Yvette, 91191; Argonne, IL, 60439

V. Vinokur

Materials Science Division; Computation Institute

Email: mironov@isp.nsc.ru
美国, Argonne, IL, 60439; Chicago, IL, 60637

A. Mironov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: mironov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Inc., 2017