Superconductor–Insulator Transition in NbTiN Films


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Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition Tc according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.

Sobre autores

M. Burdastyh

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

S. Postolova

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

T. Baturina

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

T. Proslier

Institut de recherches sur les lois fundamentales de l’univers; Materials Science Division

Email: mironov@isp.nsc.ru
França, Gif-sur-Yvette, 91191; Argonne, IL, 60439

V. Vinokur

Materials Science Division; Computation Institute

Email: mironov@isp.nsc.ru
Estados Unidos da América, Argonne, IL, 60439; Chicago, IL, 60637

A. Mironov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Autor responsável pela correspondência
Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090

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