Superconductor–Insulator Transition in NbTiN Films
- Autores: Burdastyh M.V.1,2, Postolova S.V.1,2, Baturina T.I.1,2, Proslier T.3,4, Vinokur V.M.4,5, Mironov A.Y.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institut de recherches sur les lois fundamentales de l’univers
- Materials Science Division
- Computation Institute
- Edição: Volume 106, Nº 11 (2017)
- Páginas: 749-753
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160790
- DOI: https://doi.org/10.1134/S0021364017230060
- ID: 160790
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Resumo
Experimental results indicating a direct disorder-induced superconductor–insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition Tc according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii–Kosterlitz–Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. It has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.
Sobre autores
M. Burdastyh
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
S. Postolova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
T. Baturina
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
T. Proslier
Institut de recherches sur les lois fundamentales de l’univers; Materials Science Division
Email: mironov@isp.nsc.ru
França, Gif-sur-Yvette, 91191; Argonne, IL, 60439
V. Vinokur
Materials Science Division; Computation Institute
Email: mironov@isp.nsc.ru
Estados Unidos da América, Argonne, IL, 60439; Chicago, IL, 60637
A. Mironov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: mironov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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