Enviar artigo por via de e-mail Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field
- Autores: Bovkun L.S.1,2, Ikonnikov A.V.1,3, Aleshkin V.Y.1, Krishtopenko S.S.1,4, Mikhailov N.N.5, Dvoretskii S.A.5, Potemski M.2, Piot B.2, Orlita M.2, Gavrilenko V.I.1,6
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Afiliações:
- Institute for Physics of Microstructures
- Laboratoire National des Champs Magnétiques Intenses
- Faculty of Physics
- Laboratoire Charles Coulomb, UMR CNRS 5221
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 108, Nº 5 (2018)
- Páginas: 329-334
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/161271
- DOI: https://doi.org/10.1134/S0021364018170058
- ID: 161271
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Resumo
Spectra of magnetoabsorption and Faraday rotation in HgTe/CdHgTe heterostructures with single and double quantum wells in high magnetic fields up to 11 T have been studied by the Fourier-transform spectroscopy method. The study of Faraday rotation spectra makes it possible to determine the sign of resonance circular polarization of transitions between Landau levels of carriers, which allows identifying observed intraband and interband transitions in the far and middle infrared ranges.
Sobre autores
L. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Grenoble, FR, 38042
A. Ikonnikov
Institute for Physics of Microstructures; Faculty of Physics
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Moscow, 119991
V. Aleshkin
Institute for Physics of Microstructures
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950
S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Montpellier, 34095
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
M. Potemski
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR, 38042
B. Piot
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR, 38042
M. Orlita
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR, 38042
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
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