Мақаланы E-mail арқылы жіберу Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field
- Авторлар: Bovkun L.S.1,2, Ikonnikov A.V.1,3, Aleshkin V.Y.1, Krishtopenko S.S.1,4, Mikhailov N.N.5, Dvoretskii S.A.5, Potemski M.2, Piot B.2, Orlita M.2, Gavrilenko V.I.1,6
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Мекемелер:
- Institute for Physics of Microstructures
- Laboratoire National des Champs Magnétiques Intenses
- Faculty of Physics
- Laboratoire Charles Coulomb, UMR CNRS 5221
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 108, № 5 (2018)
- Беттер: 329-334
- Бөлім: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/161271
- DOI: https://doi.org/10.1134/S0021364018170058
- ID: 161271
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Аннотация
Spectra of magnetoabsorption and Faraday rotation in HgTe/CdHgTe heterostructures with single and double quantum wells in high magnetic fields up to 11 T have been studied by the Fourier-transform spectroscopy method. The study of Faraday rotation spectra makes it possible to determine the sign of resonance circular polarization of transitions between Landau levels of carriers, which allows identifying observed intraband and interband transitions in the far and middle infrared ranges.
Авторлар туралы
L. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Grenoble, FR, 38042
A. Ikonnikov
Institute for Physics of Microstructures; Faculty of Physics
Email: gavr@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Moscow, 119991
V. Aleshkin
Institute for Physics of Microstructures
Email: gavr@ipmras.ru
Ресей, Nizhny Novgorod, 603950
S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: gavr@ipmras.ru
Ресей, Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: gavr@ipmras.ru
Ресей, Novosibirsk, 630090
M. Potemski
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Франция, Grenoble, FR, 38042
B. Piot
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Франция, Grenoble, FR, 38042
M. Orlita
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Франция, Grenoble, FR, 38042
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: gavr@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
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