Enviar artigo por via de e-mail Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells
- Autores: Ruffenach S.1, Krishtopenko S.S.1,2,3, Bovkun L.S.3,4, Ikonnikov A.V.3,5, Marcinkiewicz M.1, Consejo C.1, Potemski M.4, Piot B.4, Orlita M.4, Semyagin B.R.6, Putyato M.A.6, Emel’yanov E.A.6, Preobrazhenskii V.V.6, Knap W.1, Gonzalez-Posada F.2, Boissier G.2, Tournié E.2, Teppe F.1, Gavrilenko V.I.3,7
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Afiliações:
- Laboratoire Charles Coulomb, UMR CNRS 5221
- Institut d’Electronique et des Systèmes
- Institute for Physics of Microstructures
- Laboratoire National des Champs Magnétiques Intenses
- Faculty of Physics
- Rzhanov Institute of Semiconductor Physics
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 106, Nº 11 (2017)
- Páginas: 727-732
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160784
- DOI: https://doi.org/10.1134/S0021364017230102
- ID: 160784
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Resumo
Cyclotron resonance spectra in high magnetic fields up to 34 T in InAs/GaSb/InAs “three-layer” quantum wells with gapless Dirac fermions have been studied. In quantizing magnetic fields, an absorption line associated with transitions from the lower Landau levels of electrons in a subband with a “conical” dispersion relation has been detected. Experimental energies of the transitions have been compared to theoretical calculations with the eight-band Kane Hamiltonian. The results confirm the gapless band structure of the studied samples.
Sobre autores
S. Ruffenach
Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
França, Montpellier, 34095
S. Krishtopenko
Laboratoire Charles Coulomb, UMR CNRS 5221; Institut d’Electronique et des Systèmes; Institute for Physics of Microstructures
Email: gavr@ipmras.ru
França, Montpellier, 34095; Montpellier, 34095; Nizhny Novgorod, 603950
L. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Grenoble, FR-38042
A. Ikonnikov
Institute for Physics of Microstructures; Faculty of Physics
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Moscow, 119991
M. Marcinkiewicz
Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
França, Montpellier, 34095
C. Consejo
Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
França, Montpellier, 34095
M. Potemski
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR-38042
B. Piot
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR-38042
M. Orlita
Laboratoire National des Champs Magnétiques Intenses
Email: gavr@ipmras.ru
França, Grenoble, FR-38042
B. Semyagin
Rzhanov Institute of Semiconductor Physics
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
E. Emel’yanov
Rzhanov Institute of Semiconductor Physics
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics
Email: gavr@ipmras.ru
Rússia, Novosibirsk, 630090
W. Knap
Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
França, Montpellier, 34095
F. Gonzalez-Posada
Institut d’Electronique et des Systèmes
Email: gavr@ipmras.ru
França, Montpellier, 34095
G. Boissier
Institut d’Electronique et des Systèmes
Email: gavr@ipmras.ru
França, Montpellier, 34095
E. Tournié
Institut d’Electronique et des Systèmes
Email: gavr@ipmras.ru
França, Montpellier, 34095
F. Teppe
Laboratoire Charles Coulomb, UMR CNRS 5221
Email: gavr@ipmras.ru
França, Montpellier, 34095
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: gavr@ipmras.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
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