Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells


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Abstract

Cyclotron resonance spectra in high magnetic fields up to 34 T in InAs/GaSb/InAs “three-layer” quantum wells with gapless Dirac fermions have been studied. In quantizing magnetic fields, an absorption line associated with transitions from the lower Landau levels of electrons in a subband with a “conical” dispersion relation has been detected. Experimental energies of the transitions have been compared to theoretical calculations with the eight-band Kane Hamiltonian. The results confirm the gapless band structure of the studied samples.

About the authors

S. Ruffenach

Laboratoire Charles Coulomb, UMR CNRS 5221

Email: gavr@ipmras.ru
France, Montpellier, 34095

S. S. Krishtopenko

Laboratoire Charles Coulomb, UMR CNRS 5221; Institut d’Electronique et des Systèmes; Institute for Physics of Microstructures

Email: gavr@ipmras.ru
France, Montpellier, 34095; Montpellier, 34095; Nizhny Novgorod, 603950

L. S. Bovkun

Institute for Physics of Microstructures; Laboratoire National des Champs Magnétiques Intenses

Email: gavr@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Grenoble, FR-38042

A. V. Ikonnikov

Institute for Physics of Microstructures; Faculty of Physics

Email: gavr@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Moscow, 119991

M. Marcinkiewicz

Laboratoire Charles Coulomb, UMR CNRS 5221

Email: gavr@ipmras.ru
France, Montpellier, 34095

C. Consejo

Laboratoire Charles Coulomb, UMR CNRS 5221

Email: gavr@ipmras.ru
France, Montpellier, 34095

M. Potemski

Laboratoire National des Champs Magnétiques Intenses

Email: gavr@ipmras.ru
France, Grenoble, FR-38042

B. Piot

Laboratoire National des Champs Magnétiques Intenses

Email: gavr@ipmras.ru
France, Grenoble, FR-38042

M. Orlita

Laboratoire National des Champs Magnétiques Intenses

Email: gavr@ipmras.ru
France, Grenoble, FR-38042

B. R. Semyagin

Rzhanov Institute of Semiconductor Physics

Email: gavr@ipmras.ru
Russian Federation, Novosibirsk, 630090

M. A. Putyato

Rzhanov Institute of Semiconductor Physics

Email: gavr@ipmras.ru
Russian Federation, Novosibirsk, 630090

E. A. Emel’yanov

Rzhanov Institute of Semiconductor Physics

Email: gavr@ipmras.ru
Russian Federation, Novosibirsk, 630090

V. V. Preobrazhenskii

Rzhanov Institute of Semiconductor Physics

Email: gavr@ipmras.ru
Russian Federation, Novosibirsk, 630090

W. Knap

Laboratoire Charles Coulomb, UMR CNRS 5221

Email: gavr@ipmras.ru
France, Montpellier, 34095

F. Gonzalez-Posada

Institut d’Electronique et des Systèmes

Email: gavr@ipmras.ru
France, Montpellier, 34095

G. Boissier

Institut d’Electronique et des Systèmes

Email: gavr@ipmras.ru
France, Montpellier, 34095

E. Tournié

Institut d’Electronique et des Systèmes

Email: gavr@ipmras.ru
France, Montpellier, 34095

F. Teppe

Laboratoire Charles Coulomb, UMR CNRS 5221

Email: gavr@ipmras.ru
France, Montpellier, 34095

V. I. Gavrilenko

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: gavr@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

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