Visualization of the magnetic flux structure in phosphorus-doped EuFe2As2 single crystals
- Autores: Veshchunov I.S.1,2, Tamegai T.2, Cao G.3, Jiao W.3, Sun Y.2,4, Pyon S.2, Golovchanskiy I.A.1,5, Baranov D.S.1,2,6, Grebenchuk S.Y.1, Xu X.F.3, Shi Z.X.7, Zhou N.7, Stolyarov V.S.1,2, Vinnikov L.Y.8, Golubov A.A.1,9
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Afiliações:
- Moscow Institute of Physics and Technology (State University)
- Institute for Solid State Physics
- Department of Physics
- Department of Applied Physics
- National University of Science and Technology MISIS
- Laboratoire de physique et d’etude des materiaux
- Department of Physics and Key Laboratory of MEMS of the Ministry of Education
- Institute of Solid State Physics
- Faculty of Science and Technology and MESA+ Institute of Nanotechnology
- Edição: Volume 105, Nº 2 (2017)
- Páginas: 98-102
- Seção: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160056
- DOI: https://doi.org/10.1134/S0021364017020151
- ID: 160056
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Resumo
Magnetic flux structure on the surface of EuFe2(As1-xPx)2 single crystals with nearly optimal phosphorus doping levels x = 0.20 and x = 0.21 is studied by low-temperature magnetic force microscopy and decoration with ferromagnetic nanoparticles. The studies are performed in a broad temperature range. It is shown that the single crystal with x = 0.21 in the temperature range between the critical temperatures TSC= 22 K and TC = (18 ± 0.3) K of the superconducting and ferromagnetic phase transitions, respectively, has the vortex structure of a frozen magnetic flux, typical for type-II superconductors. The magnetic domain structure is observed in the superconducting state below TC. The nature of this structure is discussed.
Sobre autores
I. Veshchunov
Moscow Institute of Physics and Technology (State University); Institute for Solid State Physics
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700; Kashiwa, 277-8581
T. Tamegai
Institute for Solid State Physics
Email: vinnik@issp.ac.ru
Japão, Kashiwa, 277-8581
Guanghan Cao
Department of Physics
Email: vinnik@issp.ac.ru
República Popular da China, Hangzhou, 310027
Wenhe Jiao
Department of Physics
Email: vinnik@issp.ac.ru
República Popular da China, Hangzhou, 310027
Yue Sun
Institute for Solid State Physics; Department of Applied Physics
Email: vinnik@issp.ac.ru
Japão, Kashiwa, 277-8581; 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656
S. Pyon
Institute for Solid State Physics
Email: vinnik@issp.ac.ru
Japão, Kashiwa, 277-8581
I. Golovchanskiy
Moscow Institute of Physics and Technology (State University); National University of Science and Technology MISIS
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700; Moscow, 119049
D. Baranov
Moscow Institute of Physics and Technology (State University); Institute for Solid State Physics; Laboratoire de physique et d’etude des materiaux
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700; Kashiwa, 277-8581; Paris, 75005
S. Grebenchuk
Moscow Institute of Physics and Technology (State University)
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700
X. Xu
Department of Physics
Email: vinnik@issp.ac.ru
República Popular da China, Changshu, 215500
Z. Shi
Department of Physics and Key Laboratory of MEMS of the Ministry of Education
Email: vinnik@issp.ac.ru
República Popular da China, Nanjing, 211189
N. Zhou
Department of Physics and Key Laboratory of MEMS of the Ministry of Education
Email: vinnik@issp.ac.ru
República Popular da China, Nanjing, 211189
V. Stolyarov
Moscow Institute of Physics and Technology (State University); Institute for Solid State Physics
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700; Kashiwa, 277-8581
L. Vinnikov
Institute of Solid State Physics
Autor responsável pela correspondência
Email: vinnik@issp.ac.ru
Rússia, Chernogolovka, Moscow region, 142432
A. Golubov
Moscow Institute of Physics and Technology (State University); Faculty of Science and Technology and MESA+ Institute of Nanotechnology
Email: vinnik@issp.ac.ru
Rússia, Dolgoprudnyi, Moscow region, 141700; Enschede, 7500 AE
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