Spin Polarization of Mn5Ge3 in the Bulk and Thin Films


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The intermetallic compound Mn5Ge3 is one of the promising materials for application as a source of charge carriers in spintronics. The existing experimental data on the spin polarization in Mn5Ge3 demonstrate significant discrepancies. All theoretical studies concern a Mn5Ge3 bulk crystal. At the same time, thin films are of interest for applications. In this work, ab initio calculations have been performed for a Mn5Ge3 thin film on a germanium substrate. The difference between the magnetic moments of manganese atoms, densities of states, and spin polarizations for the bulk crystal and thin film has been demonstrated.

Sobre autores

N. Skorikov

Mikheev Institute of Metal Physics, Ural Branch

Autor responsável pela correspondência
Email: skorikov@ifmlrs.uran.ru
Rússia, Yekaterinburg, 620108

V. Anisimov

Mikheev Institute of Metal Physics, Ural Branch; Ural Federal University

Email: skorikov@ifmlrs.uran.ru
Rússia, Yekaterinburg, 620108; Yekaterinburg, 620002

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Inc., 2018