Spin Polarization of Mn5Ge3 in the Bulk and Thin Films

Abstract

The intermetallic compound Mn₅Ge₃ is one of the promising materials for application as a source of charge carriers in spintronics. The existing experimental data on the spin polarization in Mn₅Ge₃ demonstrate significant discrepancies. All theoretical studies concern a Mn₅Ge₃ bulk crystal. At the same time, thin films are of interest for applications. In this work, ab initio calculations have been performed for a Mn₅Ge₃ thin film on a germanium substrate. The difference between the magnetic moments of manganese atoms, densities of states, and spin polarizations for the bulk crystal and thin film has been demonstrated.