Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)–vacuum interface


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Аннотация

It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN (Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons. In the quantum efficiency spectrum of the p-GaN (Cs,O) photocathode, an exciton peak has been identified, indicating a significant contribution of the electron–hole interaction to the generation of free electrons in heavily doped p-GaN.

Авторлар туралы

S. Rozhkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

V. Bakin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090

D. Gorshkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

S. Kosolobov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090

H. Scheibler

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Terekhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: rozhkovs@isp.nsc.ru
Ресей, Novosibirsk, 630090

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