Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)–vacuum interface
- Authors: Rozhkov S.A.1,2, Bakin V.V.1, Gorshkov D.V.1,2, Kosolobov S.N.1, Scheibler H.E.1, Terekhov A.S.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 104, No 2 (2016)
- Pages: 135-139
- Section: Miscellaneous
- URL: https://journals.rcsi.science/0021-3640/article/view/159557
- DOI: https://doi.org/10.1134/S0021364016140113
- ID: 159557
Cite item
Abstract
It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN (Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons. In the quantum efficiency spectrum of the p-GaN (Cs,O) photocathode, an exciton peak has been identified, indicating a significant contribution of the electron–hole interaction to the generation of free electrons in heavily doped p-GaN.
About the authors
S. A. Rozhkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. V. Bakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
S. N. Kosolobov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
H. E. Scheibler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Terekhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: rozhkovs@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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