Low-temperature intracenter relaxation times of shallow donors in germanium
- Authors: Zhukavin R.K.1, Kovalevskii K.A.1, Sergeev S.M.1, Choporova Y.Y.2,3, Gerasimov V.V.2,3, Tsyplenkov V.V.1, Knyazev B.A.2,3, Abrosimov N.V.4, Pavlov S.G.5, Shastin V.N.1, Schneider H.6, Deßmann N.7,8, Shevchenko O.A.2, Vinokurov N.A.2, Kulipanov G.N.2, Hübers H.7,5
-
Affiliations:
- Institute for Physics of Microstructures
- Budker Institute of Nuclear Physics, Siberian Branch
- National Research Novosibirsk State University
- Leibniz Institute of Crystal Growth
- DLR Institute of Optical Sensor Systems
- Helmholtz-Zentrum Dresden-Rossendorf
- Humboldt-Universität zu Berlin
- NEST
- Issue: Vol 106, No 9 (2017)
- Pages: 571-575
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160673
- DOI: https://doi.org/10.1134/S0021364017210147
- ID: 160673
Cite item
Abstract
The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.
About the authors
R. Kh. Zhukavin
Institute for Physics of Microstructures
Author for correspondence.
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
K. A. Kovalevskii
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
S. M. Sergeev
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
Yu. Yu. Choporova
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. V. Gerasimov
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. V. Tsyplenkov
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
B. A. Knyazev
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. V. Abrosimov
Leibniz Institute of Crystal Growth
Email: zhur@ipmras.ru
Germany, Berlin, 12489
S. G. Pavlov
DLR Institute of Optical Sensor Systems
Email: zhur@ipmras.ru
Germany, Berlin, 12489
V. N. Shastin
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
H. Schneider
Helmholtz-Zentrum Dresden-Rossendorf
Email: zhur@ipmras.ru
Germany, Dresden, 01314
N. Deßmann
Humboldt-Universität zu Berlin; NEST
Email: zhur@ipmras.ru
Germany, Berlin, 12489; Pisa, 56127
O. A. Shevchenko
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090
N. A. Vinokurov
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090
G. N. Kulipanov
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Russian Federation, Novosibirsk, 630090
H.-W. Hübers
Humboldt-Universität zu Berlin; DLR Institute of Optical Sensor Systems
Email: zhur@ipmras.ru
Germany, Berlin, 12489; Berlin, 12489
Supplementary files
