Low-temperature intracenter relaxation times of shallow donors in germanium
- Авторы: Zhukavin R.K.1, Kovalevskii K.A.1, Sergeev S.M.1, Choporova Y.Y.2,3, Gerasimov V.V.2,3, Tsyplenkov V.V.1, Knyazev B.A.2,3, Abrosimov N.V.4, Pavlov S.G.5, Shastin V.N.1, Schneider H.6, Deßmann N.7,8, Shevchenko O.A.2, Vinokurov N.A.2, Kulipanov G.N.2, Hübers H.7,5
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Учреждения:
- Institute for Physics of Microstructures
- Budker Institute of Nuclear Physics, Siberian Branch
- National Research Novosibirsk State University
- Leibniz Institute of Crystal Growth
- DLR Institute of Optical Sensor Systems
- Helmholtz-Zentrum Dresden-Rossendorf
- Humboldt-Universität zu Berlin
- NEST
- Выпуск: Том 106, № 9 (2017)
- Страницы: 571-575
- Раздел: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160673
- DOI: https://doi.org/10.1134/S0021364017210147
- ID: 160673
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Аннотация
The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels.
Об авторах
R. Zhukavin
Institute for Physics of Microstructures
Автор, ответственный за переписку.
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603950
K. Kovalevskii
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603950
S. Sergeev
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603950
Yu. Choporova
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Gerasimov
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Tsyplenkov
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603950
B. Knyazev
Budker Institute of Nuclear Physics, Siberian Branch; National Research Novosibirsk State University
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
N. Abrosimov
Leibniz Institute of Crystal Growth
Email: zhur@ipmras.ru
Германия, Berlin, 12489
S. Pavlov
DLR Institute of Optical Sensor Systems
Email: zhur@ipmras.ru
Германия, Berlin, 12489
V. Shastin
Institute for Physics of Microstructures
Email: zhur@ipmras.ru
Россия, Nizhny Novgorod, 603950
H. Schneider
Helmholtz-Zentrum Dresden-Rossendorf
Email: zhur@ipmras.ru
Германия, Dresden, 01314
N. Deßmann
Humboldt-Universität zu Berlin; NEST
Email: zhur@ipmras.ru
Германия, Berlin, 12489; Pisa, 56127
O. Shevchenko
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090
N. Vinokurov
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090
G. Kulipanov
Budker Institute of Nuclear Physics, Siberian Branch
Email: zhur@ipmras.ru
Россия, Novosibirsk, 630090
H.-W. Hübers
Humboldt-Universität zu Berlin; DLR Institute of Optical Sensor Systems
Email: zhur@ipmras.ru
Германия, Berlin, 12489; Berlin, 12489
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