Email this article Hole-stimulated transfer of traps in dielectrics
- Authors: Novikov Y.N.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 105, No 10 (2017)
- Pages: 646-650
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160306
- DOI: https://doi.org/10.1134/S0021364017100101
- ID: 160306
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Abstract
The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of 3 × 10–15 cm2/(V s) has been determined for the mobility of traps with trapped holes in Si3N4.
About the authors
Yu. N. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: nov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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