Hole-stimulated transfer of traps in dielectrics

Аннотация

The transport of traps in a dielectric after capture of holes in an electric field is considered with the inclusion of the two-band conduction. The distance covered by a trap with a trapped hole decreases exponentially with an increase in the electric field. A value of 3 × 10^–15 cm²/(V s) has been determined for the mobility of traps with trapped holes in Si₃N₄.