Study of the anisotropy of the dielectric response of Na1/2Bi1/2TiO3 relaxor ferroelectric
- Authors: Zalesskii V.G.1, Polushina A.D.1,2, Obozova E.D.1, Dmitriev A.V.1, Syrnikov P.P.1, Lushnikov S.G.1
- 
							Affiliations: 
							- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
 
- Issue: Vol 105, No 3 (2017)
- Pages: 189-194
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160088
- DOI: https://doi.org/10.1134/S0021364017030146
- ID: 160088
Cite item
Abstract
The dielectric response, conductivity, and domain structure of (Na1/2Bi1/2)TiO3 single crystals are studied in the temperature range of 290–750 K for the [100], [110], and [111] crystallographic directions. It is shown that the region of optical isotropization is observed in polarized light in the temperature range of 570–620 K. In this case, the birefringence (Δn) decreases and disappears (together with the image of the domain structure) for the [100] directions. The region of optical isotropization in the [111] directions is characterized by the disappearance of the image of the domain structure and by the existence of individual regions with partial quenching. The domain structure in the [110] directions remains distinguished against the background of a significant decrease in Δn in the indicated temperature range. The region of isotropization is also manifested in the temperature dependence of the imaginary part of the dielectric response and is determined by the isotropic character of the conductivity in the range of 570–620 K. The bulk conductivity has a thermally activated character with activation energies Ea = 50−60 meV at T < 500 K and Ea = 700−900 meV for T > 620 K. The low-frequency dispersion of the dielectric response is determined by the Maxwell–Wagner mechanism and is due to an increase in the ionic conductivity at temperatures above 620 K. The anisotropy of the susceptibility holds in the entire studied ranges of frequencies (25 Hz–1 MHz) and temperatures.
About the authors
V. G. Zalesskii
Ioffe Institute
							Author for correspondence.
							Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021						
A. D. Polushina
Ioffe Institute; St. Petersburg State Electrotechnical University LETI
														Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021; St. Petersburg, 197376						
E. D. Obozova
Ioffe Institute
														Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021						
A. V. Dmitriev
Ioffe Institute
														Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021						
P. P. Syrnikov
Ioffe Institute
														Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021						
S. G. Lushnikov
Ioffe Institute
														Email: nsh@mail.ioffe.ru
				                					                																			                												                	Russian Federation, 							St. Petersburg, 194021						
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