Study of the anisotropy of the dielectric response of Na1/2Bi1/2TiO3 relaxor ferroelectric
- Авторлар: Zalesskii V.G.1, Polushina A.D.1,2, Obozova E.D.1, Dmitriev A.V.1, Syrnikov P.P.1, Lushnikov S.G.1
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Мекемелер:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Шығарылым: Том 105, № 3 (2017)
- Беттер: 189-194
- Бөлім: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160088
- DOI: https://doi.org/10.1134/S0021364017030146
- ID: 160088
Дәйексөз келтіру
Аннотация
The dielectric response, conductivity, and domain structure of (Na1/2Bi1/2)TiO3 single crystals are studied in the temperature range of 290–750 K for the [100], [110], and [111] crystallographic directions. It is shown that the region of optical isotropization is observed in polarized light in the temperature range of 570–620 K. In this case, the birefringence (Δn) decreases and disappears (together with the image of the domain structure) for the [100] directions. The region of optical isotropization in the [111] directions is characterized by the disappearance of the image of the domain structure and by the existence of individual regions with partial quenching. The domain structure in the [110] directions remains distinguished against the background of a significant decrease in Δn in the indicated temperature range. The region of isotropization is also manifested in the temperature dependence of the imaginary part of the dielectric response and is determined by the isotropic character of the conductivity in the range of 570–620 K. The bulk conductivity has a thermally activated character with activation energies Ea = 50−60 meV at T < 500 K and Ea = 700−900 meV for T > 620 K. The low-frequency dispersion of the dielectric response is determined by the Maxwell–Wagner mechanism and is due to an increase in the ionic conductivity at temperatures above 620 K. The anisotropy of the susceptibility holds in the entire studied ranges of frequencies (25 Hz–1 MHz) and temperatures.
Авторлар туралы
V. Zalesskii
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Polushina
Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
E. Obozova
Ioffe Institute
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Dmitriev
Ioffe Institute
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
P. Syrnikov
Ioffe Institute
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Lushnikov
Ioffe Institute
Email: nsh@mail.ioffe.ru
Ресей, St. Petersburg, 194021
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