Observation of the variations of the domain structure of a spontaneous electric field in a two-dimensional electron system under microwave irradiation


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详细

It has been found on a sample of the GaAs/AlGaAs heterostructure with the two-dimensional electron system that different configurations of domains of a spontaneous electric field are possible within one microwave- induced state with the resistance tending to zero. Transitions between such configurations are observed at the variation of the radiation power and magnetic field. In the general case, the configuration of domains is more complicated than existing models. The fragment of the distribution of the electric field in the sample for one of the observed configurations is in agreement with the rhombic domain structure considered by I. G. Finkler and B. I. Halperin, Phys. Rev. B 79, 085315 (2009).

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S. Dorozhkin

Institute of Solid State Physics

编辑信件的主要联系方式.
Email: dorozh@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

V. Umansky

Department of Physics

Email: dorozh@issp.ac.ru
以色列, Rehovot, 76100

K. von Klitzing

Max-Planck-Institut für Festkörperforschung

Email: dorozh@issp.ac.ru
德国, Stuttgart, D-70569

J. Smet

Max-Planck-Institut für Festkörperforschung

Email: dorozh@issp.ac.ru
德国, Stuttgart, D-70569

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