Defect Structure and Photogenerated Carrier Loss Processes in Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) Chalcopyrite Solid Solutions
- Авторы: Gapanovich M.V.1, Odin I.N.2, Rabenok E.V.1, Orishina P.S.2, Novikov G.F.1,2
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Учреждения:
- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- Moscow State University
- Выпуск: Том 55, № 7 (2019)
- Страницы: 648-652
- Раздел: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158718
- DOI: https://doi.org/10.1134/S0020168519070057
- ID: 158718
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Аннотация
Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) copper-deficient solid solutions with the chalcopyrite structure have been synthesized and their unit-cell parameters have been determined as functions of composition. Their 78-K cathodoluminescence spectra show a band centered at 1.13 eV, which is most likely due to Cu2+ ⋅ VCu defect associates. Microwave photoconductivity data demonstrate that the defect associates act as electron traps, considerably reducing the lifetime of photogenerated current carriers.
Об авторах
M. Gapanovich
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: i.n.odin@mail.ru
Россия, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432
I. Odin
Moscow State University
Автор, ответственный за переписку.
Email: i.n.odin@mail.ru
Россия, Moscow, 119991
E. Rabenok
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: i.n.odin@mail.ru
Россия, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432
P. Orishina
Moscow State University
Email: i.n.odin@mail.ru
Россия, Moscow, 119991
G. Novikov
Institute of Problems of Chemical Physics, Russian Academy of Sciences; Moscow State University
Email: i.n.odin@mail.ru
Россия, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432; Moscow, 119991
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