Defect Structure and Photogenerated Carrier Loss Processes in Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) Chalcopyrite Solid Solutions

Аннотация

Cu_{1 –x}(In_0.7Ga_0.3)Se₂ (0 ≤ x ≤ 0.30) copper-deficient solid solutions with the chalcopyrite structure have been synthesized and their unit-cell parameters have been determined as functions of composition. Their 78-K cathodoluminescence spectra show a band centered at 1.13 eV, which is most likely due to Cu²⁺ ⋅ V_Cu defect associates. Microwave photoconductivity data demonstrate that the defect associates act as electron traps, considerably reducing the lifetime of photogenerated current carriers.