Electrical Transport and Photoelectric Properties of (As2Se3)1 –x(CdSe)x (x = 0.01, 0.03, 0.05) Glasses
- 作者: Ahmedova C.A.1
-
隶属关系:
- Faculty of Arts and Sciences, Adiyaman University
- 期: 卷 55, 编号 5 (2019)
- 页面: 506-508
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158696
- DOI: https://doi.org/10.1134/S0020168519040022
- ID: 158696
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详细
(As2Se3)1 –x(CdSe)x (x = 0.01, 0.03, 0.05) glass alloys have been prepared in the temperature range 500–700°C using As2Se3 and CdSe as master alloys. The electrical transport and photoelectric properties of the alloys containing 1, 3, and 5 mol % CdSe have been studied. The temperature dependences of electrical conductivity for the glass alloys demonstrate that they are high-resistivity p-type semiconductors. The results on the photoelectric properties of the alloys indicate that the materials are photosensitive in the wavelength range 0.75–0.82 μm and that their optical band gap varies from 1.51 to 1.65 eV.
作者简介
C. Ahmedova
Faculty of Arts and Sciences, Adiyaman University
编辑信件的主要联系方式.
Email: cahmedova@adiyaman.edu.tr
土耳其, Adiyaman, 02040
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