Electrical Transport and Photoelectric Properties of (As2Se3)1 –x(CdSe)x (x = 0.01, 0.03, 0.05) Glasses

Abstract

(As₂Se₃)_{1 –x}(CdSe)_x (x = 0.01, 0.03, 0.05) glass alloys have been prepared in the temperature range 500–700°C using As₂Se₃ and CdSe as master alloys. The electrical transport and photoelectric properties of the alloys containing 1, 3, and 5 mol % CdSe have been studied. The temperature dependences of electrical conductivity for the glass alloys demonstrate that they are high-resistivity p-type semiconductors. The results on the photoelectric properties of the alloys indicate that the materials are photosensitive in the wavelength range 0.75–0.82 μm and that their optical band gap varies from 1.51 to 1.65 eV.