Ultrapure arsenic and its compounds for optical and semiconductor materials


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The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper.

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V. Fedorov

Kurnakov Institute of General and Inorganic Chemistry

编辑信件的主要联系方式.
Email: fedorov@igic.ras.ru
俄罗斯联邦, Moscow, 119991

M. Churbanov

Devyatykh Institute of Chemistry of High-Purity Substances

Email: fedorov@igic.ras.ru
俄罗斯联邦, Nizhny Novgorod, 603950

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