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Том 52, № 13 (2016)
- Год: 2016
- Статей: 2
- URL: https://journals.rcsi.science/0020-1685/issue/view/9594
Article
Nanocrystalline tin dioxide: Basics in relation with gas sensing phenomena part II. Active centers and sensor behavior
Аннотация
The experimental data and theoretical concepts on the nature and physicochemical properties of the active centers at the surface of tin dioxide are reported, which are involved in detection of toxic and explosive ambient impurities. The active centers formed at the nanocrystal SnO2 surface are classified on the basis of their chemical properties, and their role in the interaction of semiconductor nanocrystal oxides with the gases exhibiting the redox properties is confirmed. The chemical modification of the SnO2 surface aimed at elaborating a controlled amount of specific active centers is shown to be the most efficient method for increasing the selectivity of sensors. Selecting the optimum catalytic modifiers (nanoparticles or clusters of noble metals and their oxides) allows the sensor sensitivity and selectivity of the target gas detection to be increased.
1311-1338
Ultrapure arsenic and its compounds for optical and semiconductor materials
Аннотация
The article contains a survey of methods of deep purification of elemental arsenic and its compounds used in technology of optical, optoelectronic, and semiconductor materials. Severe requirements on permissible impurity content (ppb level) and features of structure and properties of these substances make the process of their production in the state of high purity unescapably multistage. The physics and chemistry and factors determining efficiency of the developed processing routes and the attained purity level for the arsenic, its oxide, chloride, hydride, and sulfides are described in this paper.
1339-1357