Structure and properties of ZnSe films grown by electrochemical deposition

D. S. Sofronov; V. V. Starikov; T. V. Novikova; E. A. Vaksler; P. V. Mateychenko; A. M. Lebedynskiy; Ya. A. Bondarenko; D. A. Gaman

doi:10.1134/S0020168516110170

Structure and properties of ZnSe films grown by electrochemical deposition

作者: Sofronov D.S.¹, Starikov V.V.², Novikova T.V.², Vaksler E.A.¹, Mateychenko P.V.³, Lebedynskiy A.M.⁴, Bondarenko Y.A.¹, Gaman D.A.²
隶属关系:
1. Institute for Single Crystals Science and Technology Complex
2. Kharkiv Polytechnic Institute (National Technical University)
3. Institute for Single Crystals
4. National Research Tomsk Polytechnic University
期: 卷 52, 编号 12 (2016)
页面: 1205-1209
栏目: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158041
DOI: https://doi.org/10.1134/S0020168516110170
ID: 158041

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

ZnSe films with the sphalerite structure have been grown through electrochemical deposition from alkaline solutions. The films grown at a current density of 0.05 A/cm² consist of spherical grains ranging in size from 0.5 to 1 µm. The films are p-type and range in resistivity from 1.5 × 10⁶ to 6.8 × 10⁶ Ω m. Their band gap ranges from 2.37 to 2.55 eV.