Composition- and temperature-dependent thermodynamic properties of the Cd, Ge‖Se, Te system, containing CdSe1–хTeх solid solutions


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The 298-K isothermal section through the phase diagram of the Cd, Ge‖Se, Te system is mapped out and the direction of the stable diagonal CdSe–CdTe is determined using thermodynamic analysis and data for the constituent binary systems CdSe–GeSe2, CdSe–CdTe, and CdTe–GeTe, in combination with X-ray diffraction and emf measurements. Data are presented on the thermodynamic properties of CdSe1–хTeх solid solutions as functions of composition and temperature. The Gibbs free energy of formation of the CdSe1–хTeх solid solutions is evaluated as a function of composition in the temperature range 300–1400 K using thermodynamic calculations. The composition dependence of the energy of mixing for CdSe1–хTeх is shown to have a negative deviation from ideality in the range x ≈ 0.2–0.6 at temperatures from 1000 to 1400 K. The contributions of each component of the CdSe1–хTeх solid solutions to their partial excess thermodynamic functions of mixing are estimated and the interaction parameter of their components in the solid and liquid states has been evaluated. The band gap of alloys in the CdSe–CdTe system is calculated as a function of composition and temperature.

Авторлар туралы

S. Asadov

Nagiyev Institute of Catalysis and Inorganic Chemistry

Хат алмасуға жауапты Автор.
Email: mirasadov@gmail.com
Әзірбайжан, pr. Javida 113, Baku, AZ1143

A. Mamedov

Nagiyev Institute of Catalysis and Inorganic Chemistry

Email: mirasadov@gmail.com
Әзірбайжан, pr. Javida 113, Baku, AZ1143

S. Kulieva

Nagiyev Institute of Catalysis and Inorganic Chemistry

Email: mirasadov@gmail.com
Әзірбайжан, pr. Javida 113, Baku, AZ1143

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2016