Photoluminescence of submicron-thick CVD (Gd  x  Y 1– x  ) 2 O 3 :Eu 3+  (11–14 at % Eu) films

V. V. Bakovets; S. V. Belaya; I. V. Korol’kov; E. A. Maksimovskii; M. I. Rakhmanova; P. A. Stabnikov; I. V. Yushina

doi:10.1134/S0020168517060012

Photoluminescence of submicron-thick CVD (Gd_xY_1–x)₂O₃:Eu³⁺ (11–14 at % Eu) films

作者: Bakovets V.V.¹, Belaya S.V.¹, Korol’kov I.V.¹^,2, Maksimovskii E.A.¹, Rakhmanova M.I.¹, Stabnikov P.A.¹, Yushina I.V.¹
隶属关系:
1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch
2. Novosibirsk National State Research University
期: 卷 53, 编号 6 (2017)
页面: 613-618
栏目: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158237
DOI: https://doi.org/10.1134/S0020168517060012
ID: 158237

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详细

(Gd_xY_1–x)₂O₃:Eu³⁺ (11–14 at % Eu) phosphor films ≤150 nm in thickness have been grown by Ln(dpm)₃ chemical vapor deposition on Si(100) substrates, and the chemical and phase compositions of the films have been determined. We have studied photoluminescence spectra of the films and the exact distribution of the Eu³⁺ activator ions over the cation sites of the solid solutions.